REFERENCES

Scientific articles (newest first) created with PillarHall® microscopic lateral high-aspect-ratio (LHAR) test structures:

1. Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels, J. Yim, O.M.E. Ylivaara, M. Ylilammi, V. Korpelainen, E. Haimi, E. Verkama, M. Utriainen and R. L. Puurunen, Phys. Chem. Chem. Phys., (2020), advance article, https://doi.org/10.1039/D0CP03358H
2. Two-Step Approach for Conformal Chemical Vapor-Phase Deposition of Ultra-Thin Conductive Silver Films, S. Wack, P.L. Popa, N. Adjeroud, C. Vergne and R. Leturcq, ACS Appl. Mater. Interfaces 12 (2020), 32, 36329–36338, https://doi.org/10.1021/acsami.0c0860
3. Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: impact on the growth per cycle and wet etch rate, K. Arts, J.H. Deijkers, T. Faraz, R.L. Puurunen, W.M.M. (Erwin) Kessels and H.C.M. Knoops, Appl. Phys. Lett. 117 (2020), 031602,  https://doi.org/10.1063/5.0015379
4. Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
K. Arts, M. Utriainen, R. L. Puurunen, W. M. M. Kessels, H. C. M. Knoops, J. Phys. Chem. C 123 (2019), 44, 27030-27035, https://pubs.acs.org/doi/10.1021/acs.jpcc.9b08176
5. ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition, A. M. Kia, N. Haufe, S. Esmaeili, C. Mart, M. Utriainen, R. L. Puurunen, W. Weinreich, Nanomaterials 9 (2019) art. 1035; https://doi.org/10.3390/nano9071035
6. Surface-Inhibiting Effect in Chemical Vapor Deposition of Boron–Carbon Thin Films from Trimethylboron, L. Souqui, H. Högberg and H. Pedersen, Chem. Mater. 31 (2019) 5408-5412; https://doi.org/10.1021/acs.chemmater.9b00492
7. Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3 extracted from their impact on film conformality, K. Arts, V. Vandalon, R.L. Puurunen, M. Utriainen, F. Gao, W.M.M. Kessels, H.C. Knoops, J. Vac. Sci. Technol. A 37 (2019) art. 030908;
https://doi.org/10.1116/1.5093620
8. Conformality in atomic layer deposition: current status overview of analysis and modelling, V. Cremers, R.L. Puurunen, J. Dendooven, Appl. Phys. Rev. 6 (2019) art. 021302;
https://doi.org/10.1063/1.5060967
9. Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures, M. Ylilammi, O. M. E. Ylivaara, R. L. Puurunen, J. Appl. Phys. 123 (2018) art. 205301 (8 pages). https://doi.org/10.1063/1.5028178
10. Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures, R. L. Puurunen, F. Gao, Proceedings of the International Baltic Conference on Atomic Layer Deposition, 2-4 Oct 2016, St. Petersburg, Russia. Electronically published in IEEE Xplore, http://ieeexplore.ieee.org/document/7886526/
11.  Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition, M. Mattinen, J. Hämäläinen, F. Gao, P. Jalkanen, K. Mizohata, J. Räisänen, R. L. Puurunen, M. Ritala, M. Leskelä, Langmuir 32 (2016) 10559-10569. http://dx.doi.org/10.1021/acs.langmuir.6b03007
12. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis, F. Gao, S. Arpiainen, R. L. Puurunen, J. Vac. Sci. Technol. A 33 (2015) 010601. http://dx.doi.org/10.1116/1.4903941, open access [PDF].

Contact us

Dr. Mikko Utriainen
VTT Technical Research Centre of Finland Ltd
Tel. +358 40 753 7415
mikko.utriainen(at)vtt.fi

pillarhall(at)vtt.fi


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